metal impurity meaning in Chinese
金属杂质
Examples
- Advanced manufacturing processes are applied and the content of metal impurity is rigorously controlled . the oxidant is reduced to the minimum extent in each manufacturing process
采用先进制程并严格控制金属杂质的含量，并在每一制程中将氧化物降至最低程度。 - Recently , a new gettering technique , which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities , has been concentrated
近年来一种新的吸杂技术?氦微孔吸杂技术因其对金属杂质显著的吸除效果而备受关注。 - By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal , the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained
通过分析dkdp晶体的原子结构以及柱面和锥面的原子结构差别，解释了晶体柱面和锥面杂质金属离子含量差别的原因以及其与紫外可见透过光谱的关系。 - Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation
所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。 - Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug
多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。